https://interestingengineering.com/innovation/china-worlds-fastest-flash-memory-device
A team at Fudan University in China claims to have developed a #flash-#memory device based on two‑dimensional Dirac #graphene that is as fast as #SRAM (static RAM). Of course, this being the generative-"AI"-obsessed world we now live in, the article goes straight to enthusing about future AI hardware. But this could be so much more important than that. Just imagine the impact on computer design and architecture if we could eliminate the distinction between main memory, cache, and mass storage — if all of a system's mass storage could be accessed at the speeds now possible only to CPU-local cache.
And it goes beyond that in non-obvious ways. Almost all but a tiny bit of memory in modern computer systems is #DRAM — dynamic RAM. DRAM must be constantly "refreshed", every few milliseconds or less, to keep its contents. And that takes power — and it's still slower than SRAM. Imagine eliminating at a stroke all of that memory refresh power consumption. Imagine computers, of all levels of computing power, that could be effectively instant-on, instant-off. Processing on demand, with no need for a hibernation file.
This time I’ve done something different on dirt roads along 
️POWER 